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1n5822: Characteristics, Specifications, Pin Configuration, and its Application

Diode Characteristics

Schottky Barrier Diode

The 1n5822 is a Schottky barrier diode, which is a type of semiconductor diode that utilizes a metal-semiconductor junction instead of a traditional p-n junction. This unique construction allows for faster switching speeds and lower forward voltage drops compared to conventional diodes.

Fast Switching Speed

One of the key characteristics of the 1n5822 diode is its fast switching speed. This diode can quickly transition from a blocking state to a conducting state and vice versa, making it ideal for high-frequency applications. The typical reverse recovery time (trr) of the 1n5822 is approximately 25 nanoseconds, which is significantly faster than standard rectifier diodes.

Low Forward Voltage Drop

Another advantageous characteristic of the 1n5822 is its low forward voltage drop (VF). The forward voltage drop is the voltage required to make the diode conduct in the forward direction. For the 1n5822, the typical forward voltage drop is around 0.45 volts at a forward current of 1 ampere. This low voltage drop translates to higher efficiency and reduced power losses in circuit applications.

High Current Capability

The 1n5822 diode is capable of handling high forward currents. With a maximum average forward current (IF(AV)) of 3 amperes and a peak forward surge current (IFSM) of 50 amperes, this diode is well-suited for power supply and voltage regulator applications where high current handling is required.


Parameter Symbol Value Unit
Maximum Repetitive Peak Reverse Voltage VRRM 40 V
Maximum RMS Voltage VRMS 28 V
Maximum DC Blocking Voltage VDC 40 V
Maximum Average Forward Rectified Current (TC = 100°C) IF(AV) 3 A
Peak Forward Surge Current (8.3 ms single half sine-wave) IFSM 50 A
Maximum Forward Voltage (IF = 1 A, TC = 25°C) VF 0.45 V
Maximum Reverse Current (VR = 40 V, TC = 25°C) IR 0.5 mA
Typical Junction Capacitance (VR = 4 V, f = 1 MHz) CJ 130 pF
Typical Reverse Recovery Time (IF = 0.5 A, IR = 1 A, Irr = 0.25 A) trr 25 ns
Operating Junction Temperature Range TJ -65 to +150 °C
Storage Temperature Range TSTG -65 to +150 °C

Pin Configuration

The 1n5822 diode has a standard DO-201AD (DO-27) package with two leads:

  1. Anode (A): The positive terminal of the diode, which allows current to flow when the diode is forward-biased.
  2. Cathode (K): The negative terminal of the diode, which blocks current flow when the diode is reverse-biased.

It is essential to identify the correct polarity of the diode when installing it in a circuit to ensure proper operation and avoid damage to the component or the circuit.


Power Supplies

One of the primary applications of the 1n5822 diode is in power supply circuits. Its fast switching speed and low forward voltage drop make it an excellent choice for rectification in high-frequency switching power supplies, such as switch-mode power supplies (SMPS) and DC-DC converters. The diode’s high current capability also allows it to handle the high currents typically found in power supply applications.

Voltage Regulators

The 1n5822 diode is commonly used in voltage regulator circuits, particularly in low-dropout (LDO) regulators. In these applications, the diode serves as a protection device, preventing reverse current flow and protecting the regulator and connected components from damage due to reverse polarity connections.

Reverse Polarity Protection

Another important application of the 1n5822 diode is in reverse polarity protection circuits. When connected in series with the power supply input, the diode blocks current flow if the power supply polarity is accidentally reversed. This protection mechanism safeguards sensitive electronic components from damage caused by incorrect power supply connections.

High-Frequency Rectification

The fast switching speed of the 1n5822 diode makes it suitable for high-frequency rectification applications, such as in radio frequency (RF) circuits and high-speed data communication systems. The diode’s low forward voltage drop and fast reverse recovery time ensure efficient rectification and minimal signal distortion in these high-frequency environments.

Battery Charging

The 1n5822 diode can be used in battery charging circuits to prevent reverse current flow from the battery to the charging source when the charging voltage is removed or falls below the battery voltage. This protection helps to prevent battery discharge and ensures optimal charging performance.

Frequently Asked Questions (FAQ)

  1. What is the difference between a Schottky diode and a regular diode?

A Schottky diode is constructed using a metal-semiconductor junction, while a regular diode uses a p-n junction. This difference in construction gives Schottky diodes faster switching speeds and lower forward voltage drops compared to regular diodes.

  1. Can I use the 1n5822 diode for high-voltage applications?

No, the 1n5822 diode is not suitable for high-voltage applications. Its maximum repetitive peak reverse voltage (VRRM) is 40 volts, and its maximum DC blocking voltage (VDC) is also 40 volts. For high-voltage applications, you should choose a diode with a higher voltage rating.

  1. Is the 1n5822 diode suitable for high-temperature environments?

Yes, the 1n5822 diode can operate in a wide temperature range. Its operating junction temperature range (TJ) is from -65°C to +150°C, making it suitable for use in high-temperature environments.

  1. What is the purpose of the diode’s reverse recovery time (trr)?

The reverse recovery time is the time required for the diode to transition from a conducting state to a blocking state when the polarity of the applied voltage is reversed. A faster reverse recovery time, like that of the 1n5822 diode, is essential for high-frequency applications where quick switching is required.

  1. How do I identify the anode and cathode of the 1n5822 diode?

The anode of the 1n5822 diode is the positive terminal, while the cathode is the negative terminal. In the DO-201AD (DO-27) package, the cathode is typically marked with a band or stripe on the diode’s body. It is crucial to consult the manufacturer’s datasheet or package information to confirm the correct polarity before installing the diode in a circuit.

In conclusion, the 1n5822 diode is a versatile and reliable Schottky barrier rectifier diode that offers fast switching speeds, low forward voltage drops, and high current capabilities. Its unique characteristics make it an excellent choice for various electronic applications, including power supplies, voltage regulators, reverse polarity protection, high-frequency rectification, and battery charging circuits. By understanding the specifications, pin configuration, and application considerations of the 1n5822 diode, designers and engineers can effectively incorporate this component into their designs to achieve optimal performance and reliability.